Let's go inside an Intel 4004 microprocessor to see an individual transistor
Jul 24, 2017 - 0:13
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Phosphorus ions then penetrate thin oxide to create the source and drain
Phosphorus ions then penetrate thin oxide to create the source and drain is an episode from Making an Integrated Circuit by John C. Bean - WeCanFigureThisOut.org. This technology episode is made for listeners who follow...
About This Episode
Phosphorus ions then penetrate thin oxide to create the source and drain is an episode from Making an Integrated Circuit by John C. Bean - WeCanFigureThisOut.org. This technology episode is made for listeners who follow Making an Integrated...
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Published Jul 24, 2017, 0:12 long, audio available.
Related Episodes
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To make this transistor, first oxide then nitride layers are grown
Jul 24, 2017 - 0:11
A shadow mask then exposes a photographic emulsion
Jul 24, 2017 - 0:12
Exposed nitride is then etched away
Jul 24, 2017 - 0:07
Oxygen reacts with the Si to grow more oxide
Jul 24, 2017 - 0:12
By heating in silane, polycrystal Si is then grown
Jul 24, 2017 - 0:04
A stripe is exposed in a second photographic emulsion
Jul 24, 2017 - 0:10
Exposed polycrystal Si is etched away leaving the transistor gate
Jul 24, 2017 - 0:09
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Phosphorus ions then penetrate thin oxide to create the source and drain is a podcast episode from Making an Integrated Circuit. You can listen online and use the related episode section to continue with more content from the same show.
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Phosphorus ions then penetrate thin oxide to create the source and drain is an episode from Making an Integrated Circuit by John C. Bean - WeCanFigureThisOut.org.
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This episode is 0:12 long.
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This episode was published on Jul 24, 2017.
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Phosphorus ions then penetrate thin oxide to create the source and drain is from Making an Integrated Circuit by John C. Bean - WeCanFigureThisOut.org.
What are the episode details?
Published Jul 24, 2017 and 0:12 long